Vacancy-modified few-layered GaN crystal for novel high-temperature energy storage-Reference-Cited by-同舟云学术

Vacancy-modified few-layered GaN crystal for novel high-temperature energy storage

Published:2022 Issue:41 Volume:10 Page:22007-22015
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Lv Songyang¹,Wang Shouzhi¹^ORCID,Wang Tailin²,Liu Lei¹,Yu Jiaoxian²,Dong Tianran¹,Wang Guodong¹,Wang Zhongxin¹,Liang Chang¹,Li Lili³,Xu Xiangang¹,Zhang Lei¹^ORCID

Affiliation:

1. Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, PR China

2. Key Laboratory of Processing and Testing Technology of Glass & Functional Ceramics of Shandong Province, School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, PR China

3. Key Laboratory of Interfacial Physics and Technology, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201800, PR China

Abstract

Vacancy-modified few-layered GaN crystal as an advanced electrode for IL-based SC devices, which is applied to high-temperature energy storage field for the first time. And the device exhibits superior energy storage capability at 150 °C.

Funder

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Shenzhen Graduate School, Peking University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TA/D2TA04540K

Reference52 articles.