Low-voltage pentacene thin-film transistors using Hf-based blend gate dielectrics
Author:
Affiliation:
1. Department of Chemistry
2. Research Institute for Natural Sciences
3. Korea University
4. Seoul 02841
5. Korea
6. Kyonggi University
7. Suwon
Abstract
High-performance pentacene thin-film transistors operating at low voltages were fabricated using hafnium (Hf)-based blend gate dielectrics.
Funder
National Research Foundation of Korea
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/TC/C5TC02960K
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