Hf‐ and Ti‐Based Organic/Inorganic Hybrid Dielectrics Synthesized via Chemical Vapor Phase for Advanced Gate Stack in Flexible Electronic Devices-Reference-Cited by-同舟云学术

Hf‐ and Ti‐Based Organic/Inorganic Hybrid Dielectrics Synthesized via Chemical Vapor Phase for Advanced Gate Stack in Flexible Electronic Devices

Published:2021-03-12 Issue:4 Volume:7 Page:2001197
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Kim Min Ju¹^ORCID,Lee Changhyeon²,Jeong Jaejoong¹,Kim Seongho¹,Lee Tae In¹,Shin Eui Joong¹,Hwang Wan Sik³,Im Sung Gap²,Cho Byung Jin¹^ORCID

Affiliation:

1. Department of Electrical Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro Yuseong‐gu Daejeon 34141 Republic of Korea

2. Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro Yuseong‐gu Daejeon 34141 Republic of Korea

3. Department of Smart Drone Convergence/Department of Materials Engineering Korea Aerospace University Goyang 10540 Republic of Korea

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202001197

Reference57 articles.

1. High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

2. High-k Organic, Inorganic, and Hybrid Dielectrics for Low-Voltage Organic Field-Effect Transistors

3. Solution-processable organic and hybrid gate dielectrics for printed electronics

4. Flexible Low-Voltage Organic Thin-Film Transistors Enabled by Low-Temperature, Ambient Solution-Processable Inorganic/Organic Hybrid Gate Dielectrics

5. High-performance poly(3-hexylthiophene) top-gate transistors incorporating TiO2 nanocomposite dielectrics

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