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A non-invasive approach to the resistive switching physical model of ultra-thin organic–inorganic dielectric-based ReRAMs

  • Published:2023 Issue:46 Volume:15 Page:18794-18805
  • ISSN:2040-3364
  • Container-title:Nanoscale
  • language:en
  • Short-container-title:Nanoscale

Author:

Martinez Alba1ORCID,Cho Byung Jin2ORCID,Kim Min Ju3ORCID

Affiliation:

1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea

2. School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 34141, Republic of Korea

3. School of Electronics and Electrical Engineering, Dankook University, Gyeonggi-do, 16890, Republic of Korea

Abstract

Physical modelling of the unstable reset and the optimized stable reset processes in ultra-thin Hf-hybrid-based ReRAM.

Funder

Dankook University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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