Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition-Reference-Cited by-同舟云学术

Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition

Published:2018 Issue:10 Volume:8 Page:5158-5165
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Jo Y.-R.¹²³⁴,Myeong S.-H.¹²³⁴,Kim B.-J.¹²³⁴^ORCID

Affiliation:

1. School of Materials Science and Engineering

2. Gwangju Institute of Science and Technology (GIST)

3. Gwangju

4. Korea

Abstract

The single-VO₂ nanowire device synthesized via sequential morphological evolutions with oxygen reduction during annealing features a sharp metal-insulator transition.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C7RA10865F

Reference43 articles.

1. Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions

2. Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

3. Thermochromic VO2 nanorods made by sputter deposition: Growth conditions and optical modeling

4. Nanograin VO2in the metal phase: a plasmonic system with falling dc resistivity as temperature rises

5. Direct Observation of the Structural Component of the Metal−Insulator Phase Transition and Growth Habits of Epitaxially Grown VO2 Nanowires

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