MoO3-induced oxidation doping of PEDOT:PSS for high performance full-solution-processed inverted quantum-dot light emitting diodes-Reference-Cited by-同舟云学术

MoO3-induced oxidation doping of PEDOT:PSS for high performance full-solution-processed inverted quantum-dot light emitting diodes

Published:2017 Issue:40 Volume:5 Page:10555-10561
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lee Min-Hsuan¹²³⁴^ORCID,Chen Lixiang¹²³⁴^ORCID,Li Ning¹²³⁴^ORCID,Zhu Furong¹²³⁴^ORCID

Affiliation:

1. Department of Physics and Institute of Advance Materials

2. Hong Kong Baptist University

3. Kowloon Tong

4. China

Abstract

MoO₃-induced oxidation in PEDOT:PSS hole contact enables improving its conductivity, work function and process compatibility for application in solution-processed transparent QD-LEDs, attaining a maximum luminous efficiency of 1.39 cd A⁻¹and a transparency of >70%.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC03700G

Reference35 articles.

1. Efficient CdSe/CdS Quantum Dot Light-Emitting Diodes Using a Thermally Polymerized Hole Transport Layer

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