Affiliation:
1. Advanced Passivation Technology Lab College of Physics Science and Technology Hebei University Baoding 071002 China
2. Province‐Ministry Co‐Construction Collaborative Innovation Center of Hebei Photovoltaic Technology College of Physics Science and Technology Hebei University Baoding 071002 China
3. Institute of Nanotechnology Karlsruhe Institute of Technology Kaiserstrasse 12 76131 Karlsruhe Germany
Abstract
AbstractPassivating contactsin heterojunction (HJ) solar cells have shown great potential in reducing recombination losses, and thereby achieving high power conversion efficiencies in photovoltaic devices. In this direction, carbon nanomaterials have emerged as a promising option for carbon/silicon (C/Si) HJsolar cells due to their tunable band structure, wide spectral absorption, high carrier mobility, and properties such as multiple exciton generation. However, the current limitations in efficiency and active area have hindered the industrialization of these devices. In this review, they examine the progress made in overcoming these constraints and discuss the prospect of achieving high power conversion efficiency (PCE) C/Si HJ devices. A C/Si HJ solar cell is also designed by introducing an innovative interface passivation strategy to further boost the PCE and accelerate the large area preparationof C/Si devices. The physical principle, device design scheme, and performanceoptimization approaches of this passivated C/Si HJ cells are discussed. Additionally, they outline potential future pathways and directions for C/Si HJ devices, including a reduction in their cost to manufacture and their incorporation intotandem solar cells. As such, this review aims to facilitate a deeperunderstanding of C/Si HJ solar cells and provide guidance for their further development.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Hebei Province
Cited by
1 articles.
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