Single p–n homojunction white light emitting diodes based on high-performance yellow luminescence of large-scale GaN microcubes-Reference-Cited by-同舟云学术

Single p–n homojunction white light emitting diodes based on high-performance yellow luminescence of large-scale GaN microcubes

Published:2016 Issue:23 Volume:4 Page:5416-5423
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lv Bingbing¹²³⁴,Tang Yingwen⁵⁶⁷⁴,Lou Shiyun¹²³⁴,Xu Yanling⁸³⁴,Zhou Shaomin¹²³⁴

Affiliation:

1. Key Laboratory for Special Functional Materials of Ministry of Education

2. Henan University

3. Kaifeng 475004

4. China

5. College of Physics and Information Engineering

6. Minnan Normal University

7. Zhangzhou 363000

8. The Audit Department of Henan University

Abstract

Cubic phase (zinc-blende) GaN (referred to as c-GaN)-based phosphor-free white light emitting diodes (LEDs) can exhibit superior characteristics and ultrahigh efficiency compared with conventional hexagonal phase (wurtzite) GaN (referred as h-GaN)-based examples.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC01402J

Reference64 articles.

1. Ultraviolet Electroluminescence of Light-Emitting Diodes Based on Single n-ZnO/p-AlGaN Heterojunction Nanowires

2. GaN Nanowire Arrays for High-Output Nanogenerators

3. High-performance GaN/Cu2O nanowires heterojunction synthesized by physical vapor deposition