Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes
Author:
Affiliation:
1. Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USA
2. OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, Regensburg, Germany
Funder
European Community within the FP7 project 'NEWLED'
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Reference27 articles.
1. Solid-State Light Sources Getting Smart
2. Effect of phosphor settling on the optical performance of phosphor-converted white light-emitting diode
3. Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells
4. Phosphor Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well
5. Phosphor-free white-light light-emitting diode of weakly carrier-density-dependent spectrum with prestrained growth of InGaN∕GaN quantum wells
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