Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb<sub>2</sub>Br<sub>5</sub> perovskite-Reference-Cited by-同舟云学术

Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb₂Br₅ perovskite

Published:2022 Issue:10 Volume:51 Page:3864-3874
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Paul Tufan¹,Sarkar Pranab Kumar²^ORCID,Maiti Soumen³^ORCID,Sahoo Aditi⁴,Chattopadhyay Kalyan Kumar¹⁵^ORCID

Affiliation:

1. School of Materials Science and Nanotechnology, Jadavpur University, Kolkata 700032, India

2. Department of Applied Science & Humanities, Assam University, Silchar 788011, India

3. St Thomas College of Engineering & Technology, Kolkata 700023, India

4. CSIR-Central Glass & Ceramic Research Institute, Kolkata 700032, India

5. Departments of Physics, Jadavpur University, Kolkata 700032, India

Abstract

Despite the recent advancements in memory devices, the quest for building materials with low power consumption is still on, with the ultimate focus on the durability of the system and reliability and reproducibility of its performance.

Funder

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/DT/D1DT03699H

Reference49 articles.

1. Resistive Switching in Nonperovskite-Phase CsPbI3 Film-Based Memory Devices

2. Flexible Hybrid Organic–Inorganic Perovskite Memory

3. Flexible Organic Transistor Memory Devices

4. Bistable resistive switching of a sputter-deposited Cr-doped SrZrO/sub 3/ memory film

5. Nanoscale Resistive Switching in Amorphous Perovskite Oxide (a-SrTiO3) Memristors

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