Resistive Switching in Nonperovskite-Phase CsPbI3 Film-Based Memory Devices-Reference-Cited by-同舟云学术

Resistive Switching in Nonperovskite-Phase CsPbI3 Film-Based Memory Devices

Published:2020-02-03 Issue:8 Volume:12 Page:9409-9420
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Xu Jia¹,Wu Yanhong¹,Li Zhenzhen¹,Liu Xiaolong¹,Cao Guozhong²,Yao Jianxi¹^ORCID

Affiliation:

1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, Beijing Key Laboratory of Energy Safety and Clean Utilization, North China Electric Power University, Beijing 102206, China

2. Department of Material Science and Engineering, University of Washington, Seattle, Washington 98195-2120, United States

Funder

Ministry of Education of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b17680

Reference57 articles.

1. Memory leads the way to better computing

2. Memristive devices for computing

3. The missing memristor found

4. Recent Advances in Memristive Materials for Artificial Synapses

5. Polymer-Based Resistive Memory Materials and Devices

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Halide perovskite memristors for optoelectronic memory and computing applications;Information & Functional Materials;2024-09-04

2. Clay Induced Performance Enhancement of a Plant Extract-Based WORM and RRAM for Sustainable Data Storage and Neuromorphic Computing Applications;ACS Applied Electronic Materials;2024-09-04

3. A mini review of recently progress on halide perovskite memristor devices: materials sciences, challenges and applications;Materials Today Energy;2024-09

4. Cyanophenol and benzyl phosphonic acid grafted electrodes for poly(butyl viologen) thin film-based electrochromic device;Solar Energy Materials and Solar Cells;2024-08

5. First-principles study of structural, mechanical, optoelectronic and thermoelectric properties of lead-free Cs2BSnX6 (B = Mg, Cu; X = Cl, Br, I) for photo responsive RRAM devices;Optical and Quantum Electronics;2024-07-05