Control of TiN oxidation upon atomic layer deposition of oxides

Author:

Filatova E. O.12345ORCID,Sakhonenkov S. S.12345ORCID,Konashuk A. S.12345ORCID,Afanas’ev V. V.6789

Affiliation:

1. St. Petersburg State University

2. Ul’yanovskaya Str. 1

3. Peterhof

4. St. Petersburg

5. Russia

6. Department of Physics and Astronomy

7. University of Leuven

8. Celestijnenlaan 200D

9. Belgium

Abstract

The amount of narrow-gap TiO2 can be controlled (increased or decreased) by inserting a thin layer enabling engineering of vacancy-mediated processes.

Funder

Russian Science Foundation

Helmholtz-Zentrum Berlin für Materialien und Energie

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference30 articles.

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3. Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance

4. Cryo-CMOS Circuits and Systems for Quantum Computing Applications

5. Re-distribution of oxygen at the interface between γ-Al2O3 and TiN

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