Stress-induced in situ epitaxial lateral overgrowth of high-quality GaN-Reference-Cited by-同舟云学术

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Stress-induced in situ epitaxial lateral overgrowth of high-quality GaN

Published:2014-06-16 Issue:34 Volume:16 Page:8058
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Liu Xiaotong,Li Dabing,Sun Xiaojuan,Li Zhiming,Song Hang,Jiang Hong,Chen Yiren

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/CE/C4CE01003E

Reference20 articles.

1. High-brightness polarized light-emitting diodes

2. Realization of a High-Performance GaN UV Detector by Nanoplasmonic Enhancement

3. Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector

4. Normally off AlGaN/GaN high electron mobility transistors with p-InGaN cap layer

5. Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

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1. Selective-Area Growth Mechanism of GaN Microrods on a Plateau Patterned Substrate;Materials;2023-03-20

2. Deterministically-grown GaN microrods on a mask-free plateau patterned substrate;Vacuum;2023-01

3. Influence of atomic incident kinetic energy on crystalline quality of epitaxial GaN thin films: A molecular dynamics study;Materials Science in Semiconductor Processing;2022-11

4. Correlation of crystalline and optical properties with UV photodetector characteristics of GaN grown by laser molecular beam epitaxy on a-sapphire;Applied Physics A;2022-10-20

5. Controlled epitaxial growth of GaN nanostructures on sapphire (11–20) using laser molecular beam epitaxy for photodetector applications;Materials Science in Semiconductor Processing;2021-04

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