High mobility flexible graphene field-effect transistors and ambipolar radio-frequency circuits
Author:
Affiliation:
1. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics
2. Peking University
3. Beijing, P. R. China
Abstract
Field-effect transistors (GFETs) were fabricated on mechanically flexible substrates using chemical vapor deposition grown graphene.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR02292D
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