Atomic layer deposition of LiF using LiN(SiMe3)2 and SF6 plasma-Reference-Cited by-同舟云学术

Atomic layer deposition of LiF using LiN(SiMe3)2 and SF6 plasma

Published:2021 Issue:15 Volume:23 Page:9304-9314
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Hornsveld N.¹²³⁴^ORCID,Kessels W. M. M.¹²³⁴^ORCID,Synowicki R. A.⁵⁶⁷,Creatore M.¹²³⁴^ORCID

Affiliation:

1. Department of Applied Physics

2. Eindhoven University of Technology

3. 5600 MB Eindhoven

4. The Netherlands

5. J.A. Woollam Co., Inc.

6. Lincoln

7. USA

Abstract

Lithium fluoride films were prepared by atomic layer deposition (ALD) using a new route in which LiN(SiMe₃)₂ is used as a precursor and SF₆ plasma as a coreactant. It was demonstrated that SF₆ plasma is a promising coreactant for ALD of high purity lithium fluoride films.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CP/D0CP05428C

Reference51 articles.

1. Atomic Layer Deposition of LiF Thin Films from Lithd and TiF4Precursors

2. Atomic Layer Deposition of LiF Thin Films from Lithd, Mg(thd)2, and TiF4 Precursors

3. Atomic Layer Deposition of Stable LiAlF4 Lithium Ion Conductive Interfacial Layer for Stable Cathode Cycling

4. Novel ALD Chemistry Enabled Low-Temperature Synthesis of Lithium Fluoride Coatings for Durable Lithium Anodes

5. LiF by atomic layer deposition—Made easy

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