Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending-Reference-Cited by-同舟云学术

Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending

Published:2020 Issue:39 Volume:8 Page:13557-13562
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

An Shu¹²³⁴,Wu Shaoteng¹²³⁴,Tan Chuan Seng¹²³⁴,Chang Guo-En⁵⁶⁷⁸,Gong Xiao⁹¹⁰¹¹¹²⁴,Kim Munho¹²³⁴^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering

2. Nanyang Technological University

3. 639798 Singapore

4. Singapore

5. Department of Mechanical Engineering, and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI)

6. National Chung Cheng University

7. Chiayi 62102

8. Taiwan

9. Department of Electrical and Computer Engineering

10. National University of Singapore

11. Engineering Drive 3

12. 117576 Singapore

Abstract

We have demonstrated flexible GeSn metal–semiconductor–metal (MSM) photodetectors (PDs) by exploring the effect of mechanical strain on their optoelectronic properties.

Funder

Nanyang Technological University

National Research Foundation Singapore

Ministry of Education - Singapore

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC03016C

Reference33 articles.

1. Low-Power Flexible Organic Light-Emitting Diode Display Device

2. In situ click chemistry generation of cyclooxygenase-2 inhibitors

3. Flexible germanium nanomembrane metal-semiconductor-metal photodiodes

4. Light absorption enhancement in Ge nanomembrane and its optoelectronic application

5. High-performance green flexible electronics based on biodegradable cellulose nanofibril paper

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