Plasma-assisted filling electron beam lithography for high throughput patterning of large area closed polygon nanostructures
Author:
Affiliation:
1. Singapore University of Technology and Design
2. Singapore
3. Institute of Materials Research and Engineering
4. A*STAR (Agency for Science
5. Technology and Research)
Abstract
The PFEBL process allows enhancement of electron beam writing efficiency for patterning of closed polygon structures using a post-exposure plasma treatment.
Funder
National Research Foundation Singapore
Digital Manufacturing and Design Centre, Singapore University of Technology and Design
SUTD-MIT International Design Centre
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR01032D
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