MoS2/MX2 heterobilayers: bandgap engineering via tensile strain or external electrical field-Reference-Cited by-同舟云学术

MoS2/MX2 heterobilayers: bandgap engineering via tensile strain or external electrical field

Published:2014 Issue:5 Volume:6 Page:2879-2886
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Lu Ning¹²³⁴⁵,Guo Hongyan⁴⁵⁶⁷⁸,Li Lei⁴⁵⁶,Dai Jun⁴⁵⁶,Wang Lu⁷⁸⁹¹⁰¹,Mei Wai-Ning¹¹¹¹²,Wu Xiaojun⁷⁸⁹¹⁰¹³,Zeng Xiao Cheng⁴⁵⁶¹³⁹

Affiliation:

1. Department of Physics

2. Anhui Normal University

3. Wuhu, China

4. Department of Chemistry and Department Mechanics and Materials Engineering

5. University of Nebraska-Lincoln

6. Lincoln, USA

7. CAS Key Lab of Materials for Energy Conversion

8. Department of Materials Science and Engineering

9. University of Science and Technology of China

10. Hefei, China

11. University of Nebraska-Omaha

12. Omaha, USA

13. Hefei National Laboratory for Physical Sciences at the Microscale

Abstract

We have performed a comprehensive first-principles study of the electronic and magnetic properties of two-dimensional (2D) transition-metal dichalcogenide (TMD) heterobilayers MX₂/MoS₂ (M = Mo, Cr, W, Fe, V; X = S, Se).

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C3NR06072A

Reference48 articles.

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2. Atomically ThinMoS2: A New Direct-Gap Semiconductor

3. Emerging Photoluminescence in Monolayer MoS2

4. Single-layer MoS2 transistors

5. Integrated Circuits Based on Bilayer MoS2 Transistors

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