V2XT2 (X: C, N; T: O, F) MXenes; potential two-dimensional materials for spintronics, optoelectronics, and photovoltaic applications-Reference-Cited by-同舟云学术

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V2XT2 (X: C, N; T: O, F) MXenes; potential two-dimensional materials for spintronics, optoelectronics, and photovoltaic applications

Published:2024-08 Issue: Volume:40 Page:109370
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Ul Haq Bakhtiar,Kim Se-Hun,Tahir S.A.,Ahmed R.,Chaudhry Aijaz Rasool,Kanoun Mohammed Benali,Goumri-Said Souraya

Funder

National Research Foundation of Korea

University of Bisha

Publisher

Elsevier BV

Reference71 articles.

1. Electric field effect in atomically thin carbon films;Novoselov;science,2004

2. Electronic and optical properties of 2D transition metal carbides and nitrides (MXenes);Hantanasirisakul;Adv. Mater.,2018

3. MoS 2/MX 2 heterobilayers: bandgap engineering via tensile strain or external electrical field;Lu;Nanoscale,2014

4. Single-layer MoS2 transistors;Radisavljevic;Nat. Nanotechnol.,2011

5. Graphene nanosheet: synthesis, molecular engineering, thin film, hybrids, and energy and analytical applications;Guo;Chem. Soc. Rev.,2011

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. From MAX to MXene: A case study of Sc2TlC MAX phase, Sc2C pristine MXene, and surface-functionalized Sc2CT2 (T=O, F) MXenes;Diamond and Related Materials;2024-10

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