Synthesis, optical properties and residual strain effect of GaN nanowires generated via metal-assisted photochemical electroless etching-Reference-Cited by-同舟云学术

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Synthesis, optical properties and residual strain effect of GaN nanowires generated via metal-assisted photochemical electroless etching

Published:2017 Issue:35 Volume:7 Page:21697-21702
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Najar Adel¹²³⁴⁵^ORCID,Shafa Muhammad¹²³⁴⁵,Anjum Dalaver⁶⁷⁸⁹

Affiliation:

1. Department of Physics

2. College of Science

3. United Arab Emirates University

4. Al Ain 15505

5. United Arab Emirates

6. Imaging and Characterization Lab

7. King Abdullah University of Science and Technology (KAUST)

8. Thuwal

9. Kingdom of Saudi Arabia

Abstract

Synthesis of GaN nanowires via metal-assisted photochemical electroless etching.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA02348K

Reference42 articles.

1. Ultrathin Nanowires-A Materials Chemistry Perspective

2. Nanoscale Science and Technology: Building a Big Future from Small Things

3. Nanowire photonics

4. Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires

5. Functional Nanowires

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