Self-powered broadband photodetection enabled by facile CVD-grown MoS2/GaN heterostructures

Author:

Liang Bor-Wei1,Chang Wen-Hao2,Huang Chun-Sheng3,Huang You-Jia2,Chen Jyun-Hong1,Li Kai-Shin1,Simbulan Kristan Bryan4ORCID,Kumar Harshvardhan5ORCID,Su Ching-Yuan6ORCID,Kuan Chieh-Hsiung3,Lan Yann-Wen27ORCID

Affiliation:

1. Taiwan Semiconductor Research Institute, National Applied Research Laboratories, Hsinchu 30078, Taiwan

2. Department of Physics, National Taiwan Normal University, Taipei 11677, Taiwan

3. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan

4. Research Center for the Natural and Applied Sciences, University of Santo Tomas, Manila 1008, Philippines

5. Department of Electronics and Communication Engineering, The LNM Institute of Information Technology, Rupa ki Nangal, Post-Sumel, Via, Jamdoli, Jaipur, Rajasthan 302031, India

6. Graduate Institute of Energy Engineering, National Central University, Taoyuan, 320317, Taiwan

7. Advanced Materials and Green Energy Research Center, National Taiwan Normal University, Taipei 11677, Taiwan

Abstract

This study shows a facile wafer-scale MoS2/ GaN heterojunction photodetectors array with self-powered broadband photoresponse (404 nm to 808 nm). The outstanding performance is attributed to the direct CVD growth of MoS2, resulting in low lattice mismatch with GaN.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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