Ice-assisted electron-beam lithography for MoS<sub>2</sub> transistors with extremely low-energy electrons-Reference-Cited by-同舟云学术

Ice-assisted electron-beam lithography for MoS₂ transistors with extremely low-energy electrons

Published:2022 Issue:11 Volume:4 Page:2479-2483
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Yao Guangnan¹²³,Zhao Ding²³^ORCID,Hong Yu¹^ORCID,Zheng Rui²³^ORCID,Qiu Min²³^ORCID

Affiliation:

1. College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China

2. Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China

3. Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China

Abstract

Extremely low-energy electrons with an in situ formed protecting layer are beneficial to reduce damages in ice-assisted electron-beam lithography. MoS2 field effect transistors with ohmic contacts have been successfully fabricated in this way.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NA/D2NA00159D

Reference33 articles.

1. Flat optics with dispersion-engineered metasurfaces

2. Plasmonics: Merging Photonics and Electronics at Nanoscale Dimensions

3. Selectively Metallized 2D Materials for Simple Logic Devices

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5. Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography

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