ALD-grown two-dimensional TiSx metal contacts for MoS2 field-effect transistors-Reference-Cited by-同舟云学术

ALD-grown two-dimensional TiS_x metal contacts for MoS₂ field-effect transistors

Published:2023 Issue:18 Volume:5 Page:4718-4727
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Mahlouji Reyhaneh¹^ORCID,Kessels Wilhelmus M. M. (Erwin)¹^ORCID,Sagade Abhay A.²^ORCID,Bol Ageeth A.¹^ORCID

Affiliation:

1. Department of Applied Physics, Eindhoven University of Technology, P. O. Box 513, 5600 MB, Eindhoven, The Netherlands

2. Department of Physics and Nanotechnology, Laboratory for Advanced Nanoelectronic Devices, SRM Institute of Science and Technology, SRM Nagar, Kattankulathur, 603 203, Tamil Nadu, India

Abstract

2D metallic TiSx can be grown at low temperatures using atomic layer deposition (ALD). Herein, we show that ultrathin films of 2D TiSx (∼1.2 nm) prepared by ALD can be used as contacts to 2D MoS2 in field-effect transistors (FETs) and improve the overall device metrics.

Funder

H2020 European Research Council

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Science and Engineering Research Board

SRM Institute of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NA/D3NA00387F

Reference81 articles.