Solvent-assisted sulfur vacancy engineering method in MoS<sub>2</sub> for a neuromorphic synaptic memristor-Reference-Cited by-同舟云学术

Solvent-assisted sulfur vacancy engineering method in MoS₂ for a neuromorphic synaptic memristor

Published:2023 Issue:10 Volume:8 Page:1417-1427
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Kim Jiyeon¹^ORCID,Im Changik²,Lee Chan³,Hwang Jinwoo⁴,Jang Hyoik⁴,Lee Jae Hak²⁵,Jin Minho²^ORCID,Lee Haeyeon³,Kim Junyoung⁶^ORCID,Sung Junho⁴,Kim Youn Sang¹²³⁷^ORCID,Lee Eunho⁴

Affiliation:

1. Department of Applied Bioengineering, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea

2. Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea

3. Department of Chemical and Biological Engineering, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea

4. Department of Chemical Engineering, Kumoh National Institute of Technology, 61 Daehak-ro, Gumi-si, Gyeongsangbuk-do, 39177, Republic of Korea

5. Samsung Display Company, Ltd., 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do, 17113, Republic of Korea

6. Inspection Business Unit (IBU), Onto Innovation, 4900 W 78th St, Bloomington, MN 55435, USA

7. Advanced Institutes of Convergence Technology, Gwanggyo-ro 145, Yeongtong-gu, Suwon, 16229, Republic of Korea

Abstract

Novel solvent-assisted vacancy engineering (SAVE) is proposed for S vacancy generation in MoS2, considering the solubility and polarity of the solvent. The SAVE-treated MoS2 synaptic memristor shows non-volatile memory characteristics and synaptic behavior.

Funder

Ministry of Science and ICT, South Korea

Korea Institute for Advancement of Technology

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NH/D3NH00201B

Reference48 articles.

1. A million spiking-neuron integrated circuit with a scalable communication network and interface