Plasma enhanced atomic layer deposition of Ga2O3thin films-Reference-Cited by-同舟云学术

Plasma enhanced atomic layer deposition of Ga2O3thin films

Published:2014 Issue:45 Volume:2 Page:19232-19238
ISSN:2050-7488
Container-title:J. Mater. Chem. A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Ramachandran Ranjith K.¹²³⁴,Dendooven Jolien¹²³⁴,Botterman Jonas¹⁵³⁴,Pulinthanathu Sree Sreeprasanth⁶⁷⁸,Poelman Dirk¹⁵³⁴,Martens Johan A.⁶⁷⁸,Poelman Hilde⁹³¹⁰,Detavernier Christophe¹²³⁴

Affiliation:

1. Department of Solid State Sciences

2. CoCooN

3. Ghent University

4. 9000 Ghent, Belgium

5. LumiLab

6. Centre for Surface Chemistry and Catalysis

7. Catholic University of Leuven

8. B-3001 Leuven, Belgium

9. Laboratory for Chemical Technology

10. B-9052 Zwijnaarde, Belgium

Abstract

We demonstrate an ALD process for Ga₂O₃that relies upon sequential pulsing of tris(2,2,6,6-tetramethyl-3,5-heptanedionato)gallium(iii), [Ga(TMHD)₃] and O₂plasma and enables the deposition from temperatures as low as 100 °C.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/TA/C4TA05007J

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