Wafer-scale and patternable synthesis of NbS2 for electrodes of organic transistors and logic gates-Reference-Cited by-同舟云学术

Wafer-scale and patternable synthesis of NbS2 for electrodes of organic transistors and logic gates

Published:2019 Issue:28 Volume:7 Page:8599-8606
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Choi Yongsuk¹²³⁴,Bark Hunyoung¹²³⁴,Kang Boseok¹²³⁴⁵,Lee Myeongjae⁶⁷⁸⁹⁴,Kim BongSoo⁶¹⁰¹¹⁴,Lee Sungjoo¹²³⁴⁵^ORCID,Lee Changgu¹²³⁴¹²^ORCID,Cho Jeong Ho¹³¹⁴¹⁵⁴^ORCID

Affiliation:

1. SKKU Advanced Institute of Nanotechnology (SAINT)

2. Sungkyunkwan University

3. Suwon 440-746

4. Republic of Korea

5. Department of Nano Engineering

6. Department of Chemistry

7. Research Institute for Natural Sciences

8. Korea University

9. Seoul 02841

10. Ulsan National Institute of Science and Technology (UNIST)

11. Ulsan 44919

12. School of Mechanical Engineering

13. Department of Chemical and Biomolecular Engineering

14. Yonsei University

15. Seoul 03722

Abstract

We developed a patternable synthesis method of wafer-scale NbS₂, which can be applied for the fabrication of source and drain electrodes of p- and n-type organic field-effect transistors (OFETs) and logic gates.

Funder

Ministry of Science, ICT and Future Planning

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC02177A

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2. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

3. Large-Area CVD-Grown Sub-2 V ReS2 Transistors and Logic Gates