Growth and characterization of the β-Ga<sub>2</sub>O<sub>3</sub> (011) plane without line-shaped defects-Reference-Cited by-同舟云学术

Growth and characterization of the β-Ga₂O₃ (011) plane without line-shaped defects

Published:2023 Issue:16 Volume:25 Page:2404-2409
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Chen Boyang¹,Mu Wenxiang¹²^ORCID,Liu Yiyuan¹,Wang Pei¹,Ma Xu¹,Zhang Jin¹,Dong Xuyang¹,Li Yang¹,Jia Zhitai¹³^ORCID,Tao Xutang¹²^ORCID

Affiliation:

1. State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Institute of Crystal Materials, Shandong University, Jinan, Shandong, 250100, China

2. Shenzhen Research Institute of Shandong University, Shenzhen 518057, China

3. Shandong Research Institute of Industrial Technology, Jinan, Shandong, 250100, China

Abstract

The β-Ga2O3 (011) plane could be a potential substrate orientation for power devices because it avoids a kind of dislocation which leads to leakage current and breakdown of power devices as the dislocations propagate parallel to the (011) plane.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Shenzhen Fundamental Research Program

Special Project for Research and Development in Key areas of Guangdong Province

Higher Education Discipline Innovation Project

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D3CE00052D