Suppression of charge carrier recombination in a Ta3N5 photoanode via defect regulation: a theoretical investigation-Reference-Cited by-同舟云学术

Suppression of charge carrier recombination in a Ta₃N₅ photoanode via defect regulation: a theoretical investigation

Published:2024 Issue:26 Volume:12 Page:15922-15929
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Fan Guozheng¹²^ORCID,Zhou Zhaobo²³^ORCID,Jing Yu¹^ORCID,Frauenheim Thomas⁴⁵

Affiliation:

1. Jiangsu Co-Innovation Centre of Efficient Processing and Utilization of Forest Resources, College of Chemical Engineering, Nanjing Forestry University, Nanjing 210037, China

2. Bremen Center for Computational Materials Science, University of Bremen, 28359 Bremen, Germany

3. Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University in Prague, Prague 12843, Czech Republic

4. School of Science, Constructor University, Bremen 28759, Germany

5. Institute for Advanced Study, Chengdu University, Chengdu 610106, China

Abstract

Intrinsic defects, charge states, O impurities, and metal doping are the main factors in determining the recombination dynamics of Ta3N5. Ionizing N vacancies and Mg doping efficiently mitigate defect-induced charge carrier recombination.

Funder

Deutsche Forschungsgemeinschaft

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TA/D4TA01693A

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