On the growth morphology and crystallography of the epitaxial Cu7Te4/CdTe interface-Reference-Cited by-同舟云学术

On the growth morphology and crystallography of the epitaxial Cu7Te4/CdTe interface

Published:2018 Issue:8 Volume:20 Page:1050-1056
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Wang Fang¹²³⁴⁵,Lei Yimin⁶⁷⁸⁹^ORCID,Wang Dapeng¹²³⁴⁵,Lei Zhibin¹²³⁴⁵^ORCID,Sun Jie¹²³⁴⁵^ORCID,Liu Zonghuai¹²³⁴⁵^ORCID

Affiliation:

1. Key Laboratory of Applied Surface and Colloid Chemistry (MOE)

2. Shaanxi Key Laboratory for Advanced Energy Devices

3. Shaanxi Engineering Laboratory for Advanced Energy Technology

4. School of Materials Science and Engineering

5. Shaanxi Normal University

6. School of Advanced Materials and Nanotechnology

7. Xidian University

8. Xi'an

9. China

Abstract

The manipulation of interface structures in the epitaxial growth of thin films is very essential, especially for some special heterogeneous structures. Crystallographic calculation method is a powerful tool when analyzing and predicting the structures of the coherent interfaces.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CE/C7CE02091K

Reference31 articles.

1. Compound Copper Chalcogenide Nanocrystals

2. Stabilization of plasmon resonance in Cu2−xS semiconductor nanoparticles

3. The “electron crystal” behavior in copper chalcogenides Cu2X (X = Se, S)