GaN nanorod array as a precursor to enhance GaN:Mn ferromagnetism-Reference-Cited by-同舟云学术

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GaN nanorod array as a precursor to enhance GaN:Mn ferromagnetism

Published:2015 Issue:118 Volume:5 Page:97408-97412
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Ji Cheng¹²³⁴⁵,Jiang Shengxiang¹²³⁴⁵,Zhang Yan⁶³⁴⁵⁷,Xing Haiyin⁸⁹¹⁰¹¹,Yang Zhijian¹²³⁴⁵,Wang Cunda¹²³⁴⁵,Yu Tongjun¹²³⁴⁵,Zhang Guoyi¹²³⁴⁵

Affiliation:

1. Research Center for Wide Gap Semiconductors

2. State Key Laboratory for Artificial Microstructure and Microscopic Physics

3. School of Physics

4. Peking University

5. 100871 Beijing

6. Institute of Condensed Matter Physics

7. PR China

8. School of Electronics and Information Engineering

9. Tianjin Polytechnic University

10. Tianjin 300387

11. China

Abstract

A GaN nanorod was, for the first time, used as a precursor to obtain magnetically enhanced GaN:Mn film.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA16170C

Reference29 articles.

1. GaN based nanorods for solid state lighting

2. Core–shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping

3. Catalyst-Free GaN Nanorods Synthesized by Selective Area Growth

4. Spintronics: Fundamentals and applications

5. Electrical spin injection in a ferromagnetic semiconductor heterostructure

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1. Recent progress in group III-nitride nanostructures: From materials to applications;Materials Science and Engineering: R: Reports;2020-10

2. Room temperature ferromagnetic half metal in Mn doped cluster-assembled sodalite phase of III-N compounds;Journal of Magnetism and Magnetic Materials;2020-04

3. Single ferromagnetic domain observed in single core-shell GaN/GaN:Mn micro-wire grown by metalorganic chemical vapor deposition;Superlattices and Microstructures;2020-01

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