Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure-Reference-Cited by-同舟云学术

Enhancement of hole mobility in InSe monolayer via an InSe and black phosphorus heterostructure

Published:2017 Issue:38 Volume:9 Page:14682-14689
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Ding Yi-min¹²³⁴⁵,Shi Jun-jie¹²³⁴⁵^ORCID,Xia Congxin⁶⁷⁸⁵^ORCID,Zhang Min⁹¹⁰¹¹⁵,Du Juan⁶⁷⁸⁵,Huang Pu¹²³⁴⁵,Wu Meng¹²³⁴⁵,Wang Hui¹²³⁴⁵,Cen Yu-lang¹²³⁴⁵,Pan Shu-hang¹²³⁴⁵

Affiliation:

1. State Key Laboratory for Artificial Microstructures and Mesoscopic Physics

2. School of Physics

3. Peking University

4. Beijing 100871

5. China

6. College of Physics and Materials Science

7. Henan Normal University

8. Xinxiang 453007

9. College of Physics and Electronic Information

10. Inner Mongolia Normal University

11. Hohhot 010022

Abstract

Enhancement of hole mobility in InSe monolayer by forming an InSe/BP vdW heterostructure with type-II band alignment.

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR02725G

Reference68 articles.

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4. Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

5. Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

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