All-sputtered, flexible, bottom-gate IGZO/Al2O3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process-Reference-Cited by-同舟云学术

All-sputtered, flexible, bottom-gate IGZO/Al2O3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process

Published:2017 Issue:28 Volume:5 Page:7043-7050
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zheng Zeke¹²³⁴⁵^ORCID,Zeng Yong¹²³⁴⁵,Yao Rihui¹²³⁴⁵,Fang Zhiqiang¹²³⁴⁵,Zhang Hongke¹²³⁴⁵,Hu Shiben¹²³⁴⁵,Li Xiaoqing¹²³⁴⁵,Ning Honglong¹²³⁴⁵,Peng Junbiao¹²³⁴⁵,Xie Weiguang⁶⁷⁸⁹¹⁰,Lu Xubing¹¹¹²¹³⁵

Affiliation:

1. Institute of Polymer Optoelectronic Materials and Devices

2. State Key Laboratory of Luminescent Materials and Devices

3. South China University of Technology

4. Guangzhou 510640

5. China

6. Siyuan Laboratory

7. Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials

8. Department of Physics and Department of Electronic Engineering

9. Jinan University

10. Guangzhou 510632

11. Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials

12. South China Normal University

13. Guangzhou 510006

Abstract

In this work, an innovative all-sputtered bottom-gate thin film transistor (TFT) using an amorphous InGaZnO (IGZO)/Al₂O₃ bi-layer channel was fabricated by fully room temperature processes on a flexible PEN substrate.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC02068F

Reference35 articles.

1. New a-IGZO Pixel Circuit Composed of Three Transistors and One Capacitor for Use in High-Speed-Scan AMOLED Displays

2. Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics

3. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

4. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

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