High-performance asymmetric electrode structured light-stimulated synaptic transistor for artificial neural networks-Reference-Cited by-同舟云学术

High-performance asymmetric electrode structured light-stimulated synaptic transistor for artificial neural networks

Published:2023 Issue: Volume: Page:
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Ran Yixin¹,Lu Wanlong¹,Wang Xin¹,Qin Zongze¹,Qin Xinsu²,Lu Guanyu¹,Hu Zhen¹,Zhu Yuanwei¹^ORCID,Bu Laju²^ORCID,Lu Guanghao¹^ORCID

Affiliation:

1. Frontier Institute of Science and Technology, State Key Laboratory of Electrical Insulation and Power Equipment, Xi’an Jiaotong University, Xi’an, Shaanxi Province, 710054, China

2. School of Chemistry, Xi’an Jiaotong University, Xi’an, Shaanxi Province, 710049, China

Abstract

In this work, an asymmetric electrode structure of the light-stimulated synaptic transistor (As-LSST) is present. The As-LSST has excellent electrical characteristics, photosensitivity, low power and multiple biosynaptic functions.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/MH/D3MH00775H

Reference86 articles.

1. Artificial Optoelectronic Synapses Based on TiN x O 2– x /MoS 2 Heterojunction for Neuromorphic Computing and Visual System

2. Brain-inspired computing with memristors: Challenges in devices, circuits, and systems

3. Flexible Artificial Optoelectronic Synapse based on Lead‐Free Metal Halide Nanocrystals for Neuromorphic Computing and Color Recognition