An all-two-dimensional Fe-FET retinomorphic sensor based on the novel gate dielectric In2Se3−xOx-Reference-Cited by-同舟云学术

An all-two-dimensional Fe-FET retinomorphic sensor based on the novel gate dielectric In₂Se_3−xO_x

Published:2023 Issue:25 Volume:15 Page:10705-10714
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Xuhong¹²,Chen Xiaoqing²,Deng Wenjie²,Li Songyu¹,An Boxing³,Chu Feihong³,Wu Yi³,Liu Famin¹,Zhang Yongzhe²^ORCID

Affiliation:

1. School of Physics, Beihang University, Beijing 100191, China

2. Key Laboratory of Optoelectronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China

3. Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China

Abstract

Based on a new two-dimensional (2D) gate dielectric material (In2Se3−xOx), a high-performance all-2D ferroelectric field-effect transistor photodetector is achieved and applied to a retinomorphic sensor.

Funder

National Key Research and Development Program of China

Natural Science Foundation of Beijing Municipality

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D3NR01567J

Reference52 articles.

1. Object-Level Motion Detection From Moving Cameras

2. Optoelectronic resistive random access memory for neuromorphic vision sensors