Interrelation between atomic switching disorder and thermoelectric properties of ZrNiSn half-Heusler compounds-Reference-Cited by-同舟云学术

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Interrelation between atomic switching disorder and thermoelectric properties of ZrNiSn half-Heusler compounds

Published:2012 Issue:13 Volume:14 Page:4467
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Xie Han-Hui,Mi Jian-Li,Hu Li-Peng,Lock Nina,Chirstensen Mogens,Fu Chen-Guang,Iversen Bo Brummerstedt,Zhao Xin-Bing,Zhu Tie-Jun

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2012/CE/C2CE25119A

Reference22 articles.

1. Complex thermoelectric materials

2. Band gap and stability in the ternary intermetallic compounds NiSnM(M=Ti,Zr,Hf): A first-principles study

3. Effect of Sn doping on the thermoelectric properties of ErNiSb-based p-type half-Heusler compound

4. Electronic transport properties of electron- and hole-doped semiconductingC1bHeusler compounds:NiTi1−xMxSn(M=Sc,V)

5. Thermoelectric performance of half-Heusler compounds TiNiSn and TiCoSb

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