Carbon-dot doped, transfer-free, low-temperature, high mobility graphene using microwave plasma CVD-Reference-Cited by-同舟云学术

Carbon-dot doped, transfer-free, low-temperature, high mobility graphene using microwave plasma CVD

Published:2022 Issue:32 Volume:12 Page:20610-20617
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Mewada Ashmi¹^ORCID,Vishwakarma Riteshkumar¹^ORCID,Zhu Rucheng¹^ORCID,Umeno Masayoshi¹

Affiliation:

1. C's Techno Inc., Co-operative Research Center for Advanced Technology, Nagoya Science Park, Moriyama-ku, Nagoya, Japan-4630003

Abstract

Microwave plasma chemical vapor deposition is a well-known method for low-temperature, large-area direct graphene growth on any insulating substrate without any catalysts.

Funder

New Energy and Industrial Technology Development Organization

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D2RA03274K

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