Insights into the vacancy behaviour at the interface of As–Sb lateral heterostructures
Author:
Affiliation:
1. Key Laboratory for Optoelectronics and Communication of Jiangxi Province
2. Jiangxi Science & Technology Normal University
3. Nanchang 330018
4. China
Abstract
The interfacial vacancy behaviour was investigated in an LHS with a large lattice mismatch to gain insights into defect and interface engineering.
Funder
National Natural Science Foundation of China
Education Department of Jiangxi Province
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC05395F
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1. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
2. Graphene and boron nitride lateral heterostructures for atomically thin circuitry
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