Multiferroic Bi2FeCrO6 based p–i–n heterojunction photovoltaic devices
Author:
Affiliation:
1. INRS – Centre Énergie, Matériaux et Télécommunications
2. Varennes
3. Canada
4. Institute of Fundamental and Frontier Science
5. University of Electronic Science and Technology of China
6. École de Technologie Supérieure
7. Montréal
Abstract
The p–i–n heterojunction devices based on intrinsic absorber multiferroic Bi2FeCrO6 sandwiched between p-type NiO and n-type Nb-doped SrTiO3 were demonstrated.
Funder
Natural Sciences and Engineering Research Council of Canada
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/TA/C7TA01604B
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