An adjustable multistage resistance switching behavior of a photoelectric artificial synaptic device with a ferroelectric diode effect for neuromorphic computing-Reference-Cited by-同舟云学术

An adjustable multistage resistance switching behavior of a photoelectric artificial synaptic device with a ferroelectric diode effect for neuromorphic computing

Published:2024 Issue:12 Volume:11 Page:2886-2897
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Lai Xi-Cai¹^ORCID,Tang Zhenhua¹^ORCID,Fang Junlin¹,Feng Leyan¹,Yao Di-Jie¹^ORCID,Zhang Li¹^ORCID,Jiang Yan-Ping¹,Liu Qiu-Xiang¹,Tang Xin-Gui¹,Zhou Yi-Chun²,Shang Jie³^ORCID,Zhong Gao-Kuo⁴,Gao Ju⁵

Affiliation:

1. School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou, 510006, P. R. China

2. School of Advanced Materials and Nanotechnology, Xidian University, Xian 710126, China

3. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

4. Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China

5. Department of Physics, The University of Hong Kong, Hong Kong 999077, P. R. China

Abstract

The ever-growing information data has driven the pursuit of advanced BFCO thin-film synapses, which have multifunctionality, adjustable plasticity, unique photoelectric response, and optical memory effects detected by femtosecond lasers.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Basic and Applied Basic Research Foundation of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/MH/D4MH00064A

Reference53 articles.

1. Deep learning

2. Research and development of artificial intelligence in China

3. The future of electronics based on memristive systems

4. The Principles of Large-Scale Computing Machines

5. Training and operation of an integrated neuromorphic network based on metal-oxide memristors

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