Integration of BaTiO3/CoFe2O4 multiferroic heterostructure on GaN semiconductor-Reference-Cited by-同舟云学术

Integration of BaTiO3/CoFe2O4 multiferroic heterostructure on GaN semiconductor

Published:2019 Issue:43 Volume:21 Page:6545-6551
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Li Guanjie¹²³⁴⁵,Li Xiaomin¹²³⁴⁵^ORCID,Zhu Qiuxiang¹²³⁴⁵,Zhao Junliang⁶⁷⁵,Gao Xiangdong¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of High Performance Ceramics and Superfine Microstructure

2. Shanghai Institute of Ceramics

3. Chinese Academy of Science

4. Shanghai

5. PR China

6. Nanjing NanoArc New Materials Technology Co., Ltd.

7. Nanjing

Abstract

High quality BaTiO₃/CoFe₂O₄ multiferroic heterostructure directly integrated on GaN semiconductor platform displayed good ferroelectric and magnetic properties.

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CE/C9CE00932A

Reference35 articles.

1. Physical Structure and Inversion Charge at a Semiconductor Interface with a Crystalline Oxide

2. Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2

3. A strong electro-optically active lead-free ferroelectric integrated on silicon

4. Band structure of the EuO/Si interface: justification for silicon spintronics

5. Single crystal functional oxides on silicon

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