Oxygen vacancy and hole conduction in amorphous TiO2-Reference-Cited by-同舟云学术

Oxygen vacancy and hole conduction in amorphous TiO2

Published:2015 Issue:1 Volume:17 Page:541-550
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Pham Hieu H.¹²³⁴,Wang Lin-Wang¹²³⁴

Affiliation:

1. Joint Center for Artificial Photosynthesis and Materials Sciences Division

2. Lawrence Berkeley National Laboratory

3. Berkeley

4. USA

Abstract

The amorphous titanium dioxide (a-TiO₂) has drawn attention recently due to the finding that it holds promise for coating conventional photoelectrodes for corrosion protection while still allowing the holes to transport to the surface.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CP/C4CP04209C

Reference71 articles.

1. Electrochemical Photolysis of Water at a Semiconductor Electrode

2. Titanium Dioxide Nanomaterials: Synthesis, Properties, Modifications, and Applications

3. Polaronic trapping of electrons and holes by native defects in anataseTiO2

4. Infrared Absorption of Reduced Rutile TiO2Single Crystals

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