Defect-engineered room temperature negative differential resistance in monolayer MoS<sub>2</sub> transistors-Reference-Cited by-同舟云学术

Defect-engineered room temperature negative differential resistance in monolayer MoS₂ transistors

Published:2022 Issue:12 Volume:7 Page:1533-1539
ISSN:2055-6756
Container-title:Nanoscale Horizons
language:en
Short-container-title:Nanoscale Horiz.

Author:

Chang Wen-Hao¹,Lu Chun-I¹,Yang Tilo H.¹^ORCID,Yang Shu-Ting¹,Simbulan Kristan Bryan¹²^ORCID,Lin Chih-Pin³,Hsieh Shang-Hsien⁴,Chen Jyun-Hong⁵,Li Kai-Shin⁵,Chen Chia-Hao⁴⁶^ORCID,Hou Tuo-Hung³,Lu Ting-Hua¹,Lan Yann-Wen¹^ORCID

Affiliation:

1. Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan

2. Department of Mathematics and Physics, University of Santo Tomas, Manila 1008, Philippines

3. Department of Electronics Engineering & Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan

4. National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan

5. Taiwan Semiconductor Research Institute, National Applied Research Laboratories, Hsinchu 300, Taiwan

6. Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan

Abstract

Defect-engineered monolayer MoS2 transistors with sulfur vacancies of ∼5 ± 0.5% behave the stable negative differential resistance effect at room temperature. The peak-to-valley ratio can be modulated via the gate electric field and light intensity.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NH/D2NH00396A

Reference45 articles.

1. New Phenomenon in Narrow Germaniump−nJunctions

2. Superlattice and Negative Differential Conductivity in Semiconductors

3. Multiple slopes in the negative differential resistance region of NbOx-based threshold switches

4. Negative Differential Resistance Circuit Design and Memory Applications

5. Leveraging nMOS Negative Differential Resistance for Low Power, High Reliability Magnetic Memory

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