Effects of proton irradiation on Si-nanocrystal/SiO2 multilayers: study of photoluminescence and first-principles calculations-Reference-Cited by-同舟云学术

Effects of proton irradiation on Si-nanocrystal/SiO2 multilayers: study of photoluminescence and first-principles calculations

Published:2015 Issue:33 Volume:3 Page:8574-8581
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Jang Seunghun¹²³⁴,Joo Beom Soo¹²³⁴,Kim Sung⁵⁶⁷⁸⁴,Kong Ki-jeong⁹¹⁰¹¹⁴,Chang Hyunju⁹¹⁰¹¹⁴,Yu Byung Deok¹²³⁴,Han Moonsup¹²³⁴

Affiliation:

1. Department of Physics

2. University of Seoul

3. Seoul

4. Republic of Korea

5. Department of Applied Physics

6. College of Applied Science

7. Kyung Hee University

8. Yongin 446-701

9. Advanced Materials Division

10. Korea Research Institute of Chemical Technology (KRICT)

11. Daejeon

Abstract

The investigation of photoluminescence and first-principles calculations clarifies the relationship between the hydrogen passivation of N at the interface and the observed band gap reduction of the embedded Si nanocrystal (NC) for Si NC/SiO₂ multilayers containing interfacial nitrogens after proton irradiation.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC01464F

Reference44 articles.

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