2D semiconductor SnP<sub>2</sub>S<sub>6</sub> as a new dielectric material for 2D electronics-Reference-Cited by-同舟云学术

2D semiconductor SnP₂S₆ as a new dielectric material for 2D electronics

Published:2022 Issue:37 Volume:10 Page:13753-13761
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Hu Jiayi¹²^ORCID,Zheng Anqi²,Pan Er²,Chen Jiangang²,Bian Renji²,Li Jinyao³,Liu Qing²,Cao Guiming²,Meng Peng²,Jian Xian¹³^ORCID,Molnar Alexander⁴,Vysochanskii Yulian⁴^ORCID,Liu Fucai¹²^ORCID

Affiliation:

1. Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313099, China

2. School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China

3. School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 611731, China

4. Institute for Solid State Physics and Chemistry, Uzhhorod University, Uzhhorod, Ukraine

Abstract

2D metal thiophosphate SnP2S6 was discovered as a new dielectric layer with a high dielectric constant (≈23), realizing a low subthreshold slope down to 69.4 mV dec−1 in the field effect transistor device geometry.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Applied Basic Research Program of Sichuan Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC01340A

Reference60 articles.

1. Van der Waals heterostructures and devices

2. Van der Waals heterostructures

3. Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides

4. Ultrafast machine vision with 2D material neural network image sensors

5. F.Schwierz and M.Ziegler , Presented in part at the 2021 IEEE Latin America Electron Devices Conference (LAEDC) , 2021

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nondefective Vacancy Enhanced Resistive Switching Reliability in Emergent van der Waals Metal Phosphorus Trisulfide-Based Memristive In-Memory Computing Hardware;Nano Letters;2024-06-24

2. Surface Oxidation and S Atom Vacancy in Tuning the Photoelectric Properties of Monolayer SnP₂S₆;The Journal of Physical Chemistry C;2023-10-05

3. Determination and Optimization of the Parameters of an Alternative Ferroelectric Power Supply;2023 IEEE 12th International Conference on Intelligent Data Acquisition and Advanced Computing Systems: Technology and Applications (IDAACS);2023-09-07

4. Two-Dimensional Dielectrics for Future Electronics: Hexagonal Boron Nitride, Oxyhalides, Transition-Metal Nitride Halides, and Beyond;ACS Applied Electronic Materials;2023-02-15

5. 2D Ruddlesden–Popper perovskite sensitized SnP₂S₆ ultraviolet photodetector enabling high responsivity and fast speed;Nanoscale Horizons;2023