Nondefective Vacancy Enhanced Resistive Switching Reliability in Emergent van der Waals Metal Phosphorus Trisulfide-Based Memristive In-Memory Computing Hardware-Reference-Cited by-同舟云学术

Nondefective Vacancy Enhanced Resistive Switching Reliability in Emergent van der Waals Metal Phosphorus Trisulfide-Based Memristive In-Memory Computing Hardware

Published:2024-06-24 Issue:26 Volume:24 Page:7843-7851
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Li Yesheng¹²^ORCID,Xiong Yao³,Zhai Baoxing⁴,Yin Lei¹,Yu Yiling¹^ORCID,Wang Hao¹,He Jun¹⁴⁵^ORCID

Affiliation:

1. Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology, Wuhan University, Wuhan 430072, China

2. Suzhou Institute of Wuhan University, Suzhou 215123, China

3. School of Science, Wuhan University of Technology, Wuhan 430070, China

4. Institute of Semiconductors, Henan Academy of Sciences, Zhengzhou 450046, China

5. Wuhan Institute of Quantum Technology, Wuhan 430206, China

Funder

National Key Research and Development Program of China

Natural Science Foundation of Jiangsu Province

Natural Science Foundation of Hubei Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.4c00212

Reference24 articles.

1. Materials and devices as solutions to computational problems in machine learning

2. Imperfection-enabled memristive switching in van der Waals materials

3. Machine Learning-Enabled Design of Point Defects in 2D Materials for Quantum and Neuromorphic Information Processing

4. Black Phosphorus Based Multicolor Light-Modulated Transparent Memristor with Enhanced Resistive Switching Performance

5. Wafer‐Scale 2D Hafnium Diselenide Based Memristor Crossbar Array for Energy‐Efficient Neural Network Hardware