Ferroelectric-mediated filamentary resistive switching in P(VDF-TrFE)/ZnO nanocomposite films-Reference-Cited by-同舟云学术

Ferroelectric-mediated filamentary resistive switching in P(VDF-TrFE)/ZnO nanocomposite films

Published:2018 Issue:23 Volume:20 Page:16176-16183
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Kim Tae Yeon¹²³⁴^ORCID,Anoop Gopinathan¹²³⁴^ORCID,Son Yeong Jun¹²³⁴,Kim Soo Hyeon⁵⁶⁷⁴,Lee Eunji¹²³⁴^ORCID,Jo Ji Young¹²³⁴^ORCID

Affiliation:

1. School of Materials Science and Engineering

2. Gwangju Institute of Science and Technology

3. Gwangju 61005

4. South Korea

5. Graduate School of Analytical Science and Technology

6. Chungnam National University

7. Daejeon 34134

Abstract

Organic ReRAMs based on ferroelectric P(VDF-TrFE) and ZnO NPs blends exhibiting bipolar resistive switching and a high ON/OFF ratio were realized using a low-cost solution process.

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Gwangju Institute of Science and Technology

Ministry of Health and Welfare

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CP/C8CP02024H

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