Improvement of the thermoelectric performance of InSe-based alloys doped with Sn
Author:
Affiliation:
1. Materials Science and Engineering College
2. Taiyuan University of Technology
3. Taiyuan 030024
4. China
5. School of Materials
6. Ningbo University of Technology
7. Ningbo 315016
Abstract
Sn preferentially occupies In sites, which creates a defect SnIn+ and intermediate band, thus tailoring the thermoelectric performance of InSe.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA23023C
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