Molecular dynamics simulation of the slip systems in VN-Reference-Cited by-同舟云学术

Molecular dynamics simulation of the slip systems in VN

Published:2015 Issue:95 Volume:5 Page:77831-77838
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Fu Tao¹²³⁴,Peng Xianghe¹²³⁴⁵,Zhao Yinbo¹²³⁴,Sun Rong⁶⁷⁸⁹,Yin Deqiang¹⁰¹¹¹²⁴,Hu Ning¹²³⁴,Wang Zhongchang⁶⁷⁸⁹

Affiliation:

1. College of Aerospace Engineering

2. Chongqing University

3. Chongqing 400044

4. China

5. State Key Laboratory of Coal Mine Disaster Dynamics and Control

6. Advanced Institute for Materials Research

7. Tohoku University

8. Sendai 980-8577

9. Japan

10. School of Manufacturing Science and Engineering

11. Sichuan University

12. Chengdu 610065

Abstract

We calculate the generalized stacking fault energies along different slip directions in various slip planes of VN and found that the 〈110〉 directions show the lowest maximum stacking fault energies.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA15878H

Reference40 articles.

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4. Electronic property and bonding configuration at the TiN(111)/VN(111) interface

5. Adhesion, atomic structure, and bonding variation at TiN/VN interface by chemical segregation

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