Growth of high quality GaN on a novel designed bonding-thinned template by HVPE-Reference-Cited by-同舟云学术

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Growth of high quality GaN on a novel designed bonding-thinned template by HVPE

Published:2012 Issue:14 Volume:14 Page:4777
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Zhang Haodong,Shao Yongliang,Zhang Lei,Hao Xiaopeng,Wu Yongzhong,Liu Xiaoyan,Dai Yuanbin,Tian Yuan

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2012/CE/C2CE25363A

Reference27 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Recent Progress in GaN-Based Light-Emitting Diodes

3. DRAM concept based on the hole gas transient effect in a AlGaN/GaN HEMT

4. GaN boules grown by high rate HVPE

5. Structural properties of GaN grown on SiC substrates by hydride vapor phase epitaxy

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New Flux-Excess Aid Technology in the Na-Flux Liquid-Phase Epitaxial Growth of GaN Crystals;Crystal Growth & Design;2024-08-22

2. Dislocation density control of GaN epitaxial film and its photodetector;Vacuum;2022-03

3. Influence of Precursor Concentration on Crystalline Quality of GaN Thin Films Grown on a Sapphire Wafer;Journal of Manufacturing Science and Engineering;2021-05-07

4. High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector;physica status solidi (a);2020-09-03

5. Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process;Crystals;2020-02-24

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