MOCVD of gallium nitride nanostructures using (N3)2Ga{(CH2)3NR2}, R = Me, Et, as a single molecule precursor: morphology control and materials characterization-Reference-Cited by-同舟云学术

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MOCVD of gallium nitride nanostructures using (N3)2Ga{(CH2)3NR2}, R = Me, Et, as a single molecule precursor: morphology control and materials characterization

Published:2003 Issue:6 Volume:13 Page:1438
ISSN:0959-9428
Container-title:Journal of Materials Chemistry
language:en
Short-container-title:J. Mater. Chem.

Author:

Khanderi Jayaprakash,Wohlfart Andreas,Parala Harish,Devi Anjana,Hambrock Julia,Birkner Alexander,Fischer Roland. A.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2003/JM/B301727C

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